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Ultimate Ge passivation: process and materials characterization of ultrathin Si cap layers grown on Ge substrates

dc.contributor.authorVincent, Benjamin
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorValev, Ventislav
dc.contributor.authorVerbiest, Thierry
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T00:01:00Z
dc.date.available2021-10-19T00:01:00Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18300
dc.sourceIIOimport
dc.titleUltimate Ge passivation: process and materials characterization of ultrathin Si cap layers grown on Ge substrates
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpageI4.3
dc.source.conferenceMRS Spring Meeting Symposium I: Materials for End-of Roadmap Scaling of CMOS Devices
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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