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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

dc.contributor.authorVincent, Benjamin
dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, S.
dc.contributor.authorNishimura, T.
dc.contributor.authorDemeulemeester, J.
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVantomme, Andre
dc.contributor.authorNakatsuka, O.
dc.contributor.authorZaima, S.
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T00:03:05Z
dc.date.available2021-10-19T00:03:05Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18304
dc.sourceIIOimport
dc.titleCharacterization of GeSn materials for future Ge pMOSFETs source/drain stressors
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials
dc.source.conferencedate7/06/2010
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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