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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
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Authors
Xie, Qi
;
Deduytsche, Davy
;
Schaekers, Marc
;
Caymax, Matty
;
Delabie, Annelies
;
Qu, Xin-Ping
;
Detavernier, Christophe
ISSN
0003-6951
Issue
11
Journal
Applied Physics Letters
Volume
97
Title
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Publication type
Journal article
Embargo date
9999-12-31
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