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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
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1901 since deposited on 2021-10-19
Acq. date: 2025-10-23
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1901 since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations