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A unified approach for hot-carrier degradation of DC current gain and 1/f noise of bipolar transistors

dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVancuyck, Geert
dc.contributor.authorDeferm, Ludo
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-30T08:09:36Z
dc.date.available2021-09-30T08:09:36Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1838
dc.sourceIIOimport
dc.titleA unified approach for hot-carrier degradation of DC current gain and 1/f noise of bipolar transistors
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVancuyck, Geert
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage104
dc.source.endpage107
dc.source.conferenceProceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - BCTM
dc.source.conferencedate28/09/1997
dc.source.conferencelocationMinneapolis, MN USA
imec.availabilityPublished - open access


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