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Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs

dc.contributor.authorZhang, Cher Xuan
dc.contributor.authorZhang, E. Xia
dc.contributor.authorFleetwood, Dan M.
dc.contributor.authorSchrimpf, Ronald D
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T00:55:44Z
dc.date.available2021-10-19T00:55:44Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18409
dc.sourceIIOimport
dc.titleEffect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.conference11th European Conference on Radiation and its Effects on Components and Systems - RADECS
dc.source.conferencedate20/09/2010
dc.source.conferencelocationAustria
imec.availabilityPublished - imec


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