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Nanostructured silicon surface morphology formation under highly ionized microwave plasma conditions

dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorGuschin, O.
dc.contributor.authorIgnatov, P.
dc.contributor.authorYafarov, R.
dc.contributor.authorYanovich, S.
dc.date.accessioned2021-10-19T12:31:18Z
dc.date.available2021-10-19T12:31:18Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18521
dc.sourceIIOimport
dc.titleNanostructured silicon surface morphology formation under highly ionized microwave plasma conditions
dc.typeOral presentation
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference4th International Workshop on Plasma Etch and Strip in Microelectronics - PESM
dc.source.conferencedate3/05/2011
dc.source.conferencelocationMechelen Belgium
imec.availabilityPublished - open access


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