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Electrical quality of III-V/oxide interfaces: good enough for MOSFET devices?

dc.contributor.authorBrammertz, Guy
dc.contributor.authorAlian, AliReza
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorSioncke, Sonja
dc.contributor.authorMerckling, Clement
dc.contributor.authorWang, Wei-E
dc.contributor.authorCaymax, Matty
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T12:39:53Z
dc.date.available2021-10-19T12:39:53Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18621
dc.sourceIIOimport
dc.titleElectrical quality of III-V/oxide interfaces: good enough for MOSFET devices?
dc.typeProceedings paper
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1017
dc.source.endpage1022
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate13/03/2011
dc.source.conferencelocationShanghai China
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 34, Issue 1


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