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Uniaxial stress efficiency for different fin dimensions of triple-gate SOI MOSFETs

dc.contributor.authorBuhler, R.T.
dc.contributor.authorAgopian, P.D.G.
dc.contributor.authorGiacomini, R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-19T12:40:42Z
dc.date.available2021-10-19T12:40:42Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18628
dc.sourceIIOimport
dc.titleUniaxial stress efficiency for different fin dimensions of triple-gate SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference37th IEEE International SOI Conference
dc.source.conferencedate3/10/2011
dc.source.conferencelocationTempe, AZ USA
imec.availabilityPublished - open access


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