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Probing the metal gate high-k interactions by backside XPS and C-AFM

dc.contributor.authorCelano, Umberto
dc.contributor.authorConard, Thierry
dc.contributor.authorHantschel, Thomas
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-19T12:43:14Z
dc.date.available2021-10-19T12:43:14Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18649
dc.sourceIIOimport
dc.titleProbing the metal gate high-k interactions by backside XPS and C-AFM
dc.typeProceedings paper
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1336-p07-06
dc.source.conferenceInterface Engineering for Post-CMOS Emerging Channel Materials
dc.source.conferencedate26/04/2011
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 1336


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