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Radiation hardness of SiGe and Ge-based CMOS technologies

dc.contributor.authorClaeys, Cor
dc.contributor.authorIacvo, C.
dc.contributor.authorMitard, Jerome
dc.contributor.authorArora, R.
dc.contributor.authorZhang, C.
dc.contributor.authorGalloway, K.
dc.contributor.authorFleetwood, D.
dc.contributor.authorSchrimpf, R.
dc.contributor.authorPoizat, M.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-19T12:52:40Z
dc.date.available2021-10-19T12:52:40Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18712
dc.sourceIIOimport
dc.titleRadiation hardness of SiGe and Ge-based CMOS technologies
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage17
dc.source.endpage30
dc.source.conference26th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2011
dc.source.conferencelocationJoao Pessoa Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 39, Issue 1


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