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Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
Publication:
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Crupi, Felice
;
Alioto, Massimo
;
Franco, Jacopo
;
Magnone, Paolo
;
Kaczer, Ben
;
Groeseneken, Guido
;
Mitard, Jerome
;
Witters, Liesbeth
;
Hoffmann, Thomas Y.
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Views
1900
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
1900
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations