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Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

dc.contributor.authorCrupi, Felice
dc.contributor.authorAlioto, Massimo
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMagnone, Paolo
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T12:59:40Z
dc.date.available2021-10-19T12:59:40Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18756
dc.sourceIIOimport
dc.titleExperimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.beginpage2249
dc.source.endpage2252
dc.source.conferenceIEEE International Symposium on Circuits and Systems - ISCAS
dc.source.conferencedate15/05/2011
dc.source.conferencelocationRio de Janeiro Brazil
imec.availabilityPublished - imec


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