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Laser annealed SiGe devices for MEMS applications at temperatures below 250C

dc.contributor.authorEl Rifai, Joumana
dc.contributor.authorSedky, Sherif
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorSeveri, Simone
dc.contributor.authorLin, Dennis
dc.contributor.authorPuers, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-19T13:22:30Z
dc.date.available2021-10-19T13:22:30Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18870
dc.sourceIIOimport
dc.titleLaser annealed SiGe devices for MEMS applications at temperatures below 250C
dc.typeProceedings paper
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorPuers, Bob
dc.contributor.imecauthorVan Hoof, Chris
dc.source.peerreviewyes
dc.source.beginpage1336
dc.source.endpage1339
dc.source.conference16th International Conference on Solid-State Sensors, Actuators and Microsystems - TRANSDUCERS
dc.source.conferencedate5/06/2011
dc.source.conferencelocationBeijing China
imec.availabilityPublished - imec


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