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On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T13:36:04Z
dc.date.available2021-10-19T13:36:04Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18925
dc.sourceIIOimport
dc.titleOn the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage624
dc.source.endpage629
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate10/04/2011
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access
imec.internalnotes6A.4


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