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Superior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body bias

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGrasser, T.
dc.contributor.authorMitard, Jerome
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorCho, Moon Ju
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorChiarella, Thomas
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorWang, Wei-E
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T13:36:24Z
dc.date.available2021-10-19T13:36:24Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18926
dc.sourceIIOimport
dc.titleSuperior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body bias
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage445
dc.source.endpage448
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access


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