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Ge low-temperature chemical vapor deposition (CVD) using Ge2H6

dc.contributor.authorGencarelli, Federica
dc.contributor.authorVincent, Benjamin
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T13:41:18Z
dc.date.available2021-10-19T13:41:18Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18945
dc.sourceIIOimport
dc.titleGe low-temperature chemical vapor deposition (CVD) using Ge2H6
dc.typeOral presentation
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference7th International Conference on Silicium Epitaxy and Heterostructures - ICSI-7
dc.source.conferencedate29/08/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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