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Advanced capacitor dielectrics: towards 2x nm DRAM

dc.contributor.authorKim, Min-Soo
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorSwerts, Johan
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorTomida, Kazuyuki
dc.contributor.authorKaczer, Ben
dc.contributor.authorOpsomer, Karl
dc.contributor.authorSchaekers, Marc
dc.contributor.authorTielens, Hilde
dc.contributor.authorVrancken, Christa
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorAltimime, Laith
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-19T14:50:41Z
dc.date.available2021-10-19T14:50:41Z
dc.date.issued2011-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19177
dc.sourceIIOimport
dc.titleAdvanced capacitor dielectrics: towards 2x nm DRAM
dc.typeProceedings paper
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorTomida, Kazuyuki
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage42
dc.source.endpage45
dc.source.conference3rd International Memory Workshop - IMW
dc.source.conferencedate22/05/2011
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access


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