Show simple item record

Electrical characterization of the MOS (metal-oxide-semiconductor) system: High mobility substrates

dc.contributor.authorLin, Dennis
dc.contributor.authorBrammertz, Guy
dc.contributor.authorSioncke, Sonja
dc.contributor.authorNyns, Laura
dc.contributor.authorAlian, AliReza
dc.contributor.authorWang, Wei-E
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T15:32:46Z
dc.date.available2021-10-19T15:32:46Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19303
dc.sourceIIOimport
dc.titleElectrical characterization of the MOS (metal-oxide-semiconductor) system: High mobility substrates
dc.typeProceedings paper
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1065
dc.source.endpage1070
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate13/03/2011
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 34, Iss. 1


Files in this item

Thumbnail
Name:
23490.pdf
Size:
318.6Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record