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Random telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting technique

dc.contributor.authorLiu, Wenhu
dc.contributor.authorPey, Kin Leong
dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorWu, Xing
dc.contributor.authorBosman, Michel
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-19T15:39:18Z
dc.date.available2021-10-19T15:39:18Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19321
dc.sourceIIOimport
dc.titleRandom telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting technique
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage182
dc.source.endpage189
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate10/04/2011
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access
imec.internalnotes3A.1


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