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1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHellings, Geert
dc.contributor.authorKrom, Raymond
dc.contributor.authorFranco, Jacopo
dc.contributor.authorEneman, Geert
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorFavia, Paola
dc.contributor.authorDekkers, Harold
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorVanderheyden, Annelies
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorEyben, Pierre
dc.contributor.authorTakeoka, Shinji
dc.contributor.authorYamaguchi, Shinpei
dc.contributor.authorVan Dal, Mark
dc.contributor.authorWang, Wei-E
dc.contributor.authorHong, Sug-Hun
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T16:25:05Z
dc.date.available2021-10-19T16:25:05Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19439
dc.sourceIIOimport
dc.title1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.contributor.orcidimecEyben, Pierre::0000-0003-3686-556X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage134
dc.source.endpage135
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate13/06/2011
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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