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Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

dc.contributor.authorMolle, A.
dc.contributor.authorBaldovino, S.
dc.contributor.authorLamagna, L.
dc.contributor.authorSpiga, S.
dc.contributor.authorLamperti, A.
dc.contributor.authorFanciulli, M.
dc.contributor.authorTsoutsou, D.
dc.contributor.authorGolias, E.
dc.contributor.authordimoulas, A.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:28:26Z
dc.date.available2021-10-19T16:28:26Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19447
dc.sourceIIOimport
dc.titleActive trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers
dc.typeProceedings paper
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewno
dc.source.beginpage203
dc.source.endpage221
dc.source.conferencePhysics and Technology of High-k Materials 9
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; vol. 41, Issue 3


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