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N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal

dc.contributor.authorNguyen, N.D.
dc.contributor.authorSouriau, Laurent
dc.contributor.authorShimizu, Y.
dc.contributor.authorJiang, Sijia
dc.contributor.authorRosseel, Erik
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorMoussa, Alain
dc.contributor.authorClarysse, Trudo
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:41:26Z
dc.date.available2021-10-19T16:41:26Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19480
dc.sourceIIOimport
dc.titleN-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
dc.typeOral presentation
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference7th International Conference on Silicium Epitaxy and Heterostructures - ICSI-7
dc.source.conferencedate29/08/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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