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dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMitard, Jerome
dc.contributor.authorHong, Sug-Hun
dc.contributor.authorTakeoka, Shinji
dc.contributor.authorTseng, Joshua
dc.contributor.authorWang, Wei-E
dc.contributor.authorYamaguchi, Shinpei
dc.contributor.authorTrojman, Lionel
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorSchram, Tom
dc.contributor.authorRohr, Erika
dc.contributor.authorCollaert, Nadine
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBourdelle, Konstantin
dc.contributor.authorNguyen, B-Y
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T17:52:17Z
dc.date.available2021-10-19T17:52:17Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19651
dc.sourceIIOimport
dc.titleOn the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceInternational Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology - IWDTF-11
dc.source.conferencedate20/01/2011
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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