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Study of point defects in silicon by means of positron annihilation with core electrons

dc.contributor.authorKuriplach, J.
dc.contributor.authorVan Hoecke, T.
dc.contributor.authorVan Waeyenberge, B.
dc.contributor.authorDauwe, C.
dc.contributor.authorSegers, D.
dc.contributor.authorBalcaen, N.
dc.contributor.authorMorales, A. L.
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSob, M.
dc.date.accessioned2021-09-30T08:35:15Z
dc.date.available2021-09-30T08:35:15Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1976
dc.sourceIIOimport
dc.titleStudy of point defects in silicon by means of positron annihilation with core electrons
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage605
dc.source.endpage607
dc.source.conferenceProceedings 11th International Conference on Positron Annihilation - ICPA-11
dc.source.conferencedate20/05/1997
dc.source.conferencelocationKansas City, KA USA
imec.availabilityPublished - open access


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