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A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization

dc.contributor.authorSimoen, Eddy
dc.contributor.authorLauwaert, J.
dc.contributor.authorVrielinck, H.
dc.contributor.authorIoannou-Sougleridis, V.
dc.contributor.authordimoulas, A.
dc.date.accessioned2021-10-19T18:53:42Z
dc.date.available2021-10-19T18:53:42Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19789
dc.sourceIIOimport
dc.titleA deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage299
dc.source.endpage308
dc.source.conferenceULSI Process Integration 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 41, Issue 7


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