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Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal
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Authors
Srivastava, Puneet
;
Das, Jo
;
Visalli, Domenica
;
Van Hove, Marleen
;
Malinowski, Pawel
;
Marcon, Denis
;
Lenci, Silvia
;
Geens, Karen
;
Cheng, Kai
;
Leys, Maarten
;
Decoutere, Stefaan
;
Mertens, Robert
;
Borghs, Gustaaf
ISSN
0741-3106
Issue
1
Journal
IEEE Electron Device Letters
Volume
32
Title
Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal
Publication type
Journal article
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