Publication:
Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal
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1858 since deposited on 2021-10-19
Acq. date: 2026-02-26
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Statistics
Views
1858 since deposited on 2021-10-19
Acq. date: 2026-02-26
Citations