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Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations

dc.contributor.authorTang, Baojun
dc.contributor.authorZhang, Weidong
dc.contributor.authorZhang, Jianfu
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-19T19:29:59Z
dc.date.available2021-10-19T19:29:59Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19866
dc.sourceIIOimport
dc.titleAbnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations
dc.typeProceedings paper
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage219
dc.source.endpage222
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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