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Impact of EUV lithography line edge roughness on 16 nm memory generation

dc.contributor.authorVaglio Pret, Alessandro
dc.contributor.authorPoliakov, Pavel
dc.contributor.authorBianchi, Davide
dc.contributor.authorGronheid, Roel
dc.contributor.authorBlomme, Pieter
dc.contributor.authorMiranda Corbalan, Miguel
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDehaene, Wim
dc.date.accessioned2021-10-19T20:03:11Z
dc.date.available2021-10-19T20:03:11Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19935
dc.sourceIIOimport
dc.titleImpact of EUV lithography line edge roughness on 16 nm memory generation
dc.typeOral presentation
dc.contributor.imecauthorVaglio Pret, Alessandro
dc.contributor.imecauthorGronheid, Roel
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference55th International conference on Electron, Ion and Photon Beam Technology and Nanofabrication - EIPBN
dc.source.conferencedate31/05/2011
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access


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