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Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-30T09:17:29Z
dc.date.available2021-09-30T09:17:29Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2006
dc.sourceIIOimport
dc.titleInterface defects of the new type detected by the noise method in SOI and SOS MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage203
dc.source.endpage211
dc.source.conferenceProceedings of the 8th International Symposium on Silicon-on-Insulator Technology and Devices
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 97-23


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