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Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts

dc.contributor.authorVincent, Benjamin
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorWaldron, Niamh
dc.contributor.authorWang, W.-E.
dc.contributor.authorFranquet, Alexis
dc.contributor.authorDouhard, Bastien
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T21:18:32Z
dc.date.available2021-10-19T21:18:32Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20091
dc.sourceIIOimport
dc.titleGe chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts
dc.typeOral presentation
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference7th International Conference on Silicium Epitaxy and Heterostructures - ICSI
dc.source.conferencedate29/08/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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