dc.contributor.author | Vincent, Benjamin | |
dc.contributor.author | Firrincieli, Andrea | |
dc.contributor.author | Waldron, Niamh | |
dc.contributor.author | Wang, W.-E. | |
dc.contributor.author | Franquet, Alexis | |
dc.contributor.author | Douhard, Bastien | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Vandervorst, Wilfried | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Caymax, Matty | |
dc.date.accessioned | 2021-10-19T21:18:32Z | |
dc.date.available | 2021-10-19T21:18:32Z | |
dc.date.issued | 2011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/20091 | |
dc.source | IIOimport | |
dc.title | Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Vincent, Benjamin | |
dc.contributor.imecauthor | Firrincieli, Andrea | |
dc.contributor.imecauthor | Waldron, Niamh | |
dc.contributor.imecauthor | Franquet, Alexis | |
dc.contributor.imecauthor | Douhard, Bastien | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | Vandervorst, Wilfried | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.contributor.orcidimec | Franquet, Alexis::0000-0002-7371-8852 | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.source.peerreview | no | |
dc.source.conference | 7th International Conference on Silicium Epitaxy and Heterostructures - ICSI | |
dc.source.conferencedate | 29/08/2011 | |
dc.source.conferencelocation | Leuven Belgium | |
imec.availability | Published - imec | |