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Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorMerckling, Clement
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T21:20:26Z
dc.date.available2021-10-19T21:20:26Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20094
dc.sourceIIOimport
dc.titleBiaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage239
dc.source.endpage248
dc.source.conferenceULSI Process Integration 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 41, Issue 7


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