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dc.contributor.authorWaldron, Niamh
dc.contributor.authorNguyen, Duy
dc.contributor.authorLin, Dennis
dc.contributor.authorBrammertz, Guy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorWinderickx, Gillis
dc.contributor.authorSioncke, Sonja
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorWang, Gang
dc.contributor.authorMitard, Jerome
dc.contributor.authorWang, Wei-E
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T21:36:32Z
dc.date.available2021-10-19T21:36:32Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20125
dc.sourceIIOimport
dc.titleHeterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment
dc.typeProceedings paper
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage299
dc.source.endpage309
dc.source.conferenceDielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
dc.source.conferencedate1/05/2011
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 35, Issue 3


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