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Influence of process parameters on low current resistive switching in MOCVD and ALD NiO Films

dc.contributor.authorWang, Xin Peng
dc.contributor.authorWouters, Dirk
dc.contributor.authorToeller, Michael
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorChen, Yangyin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-19T21:42:36Z
dc.date.available2021-10-19T21:42:36Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20136
dc.sourceIIOimport
dc.titleInfluence of process parameters on low current resistive switching in MOCVD and ALD NiO Films
dc.typeProceedings paper
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1337-q07-09
dc.source.conferenceNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
dc.source.conferencedate25/04/2011
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 1337


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