Publication:
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
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1936 since deposited on 2021-10-19
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Acq. date: 2025-12-11
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Views
1936 since deposited on 2021-10-19
2last month
2last week
Acq. date: 2025-12-11
Citations