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TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
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Authors
Xie, Qi
;
Musschoot, Jan
;
Schaekers, Marc
;
Caymax, Matty
;
Delabie, Annelies
;
Lin, Dennis
;
Qu, Xin-Ping
;
Jiang, Yu-Long
;
Van den Berghe, Sven
;
Detavernier, Christophe
ISSN
1099-0062
Issue
5
Journal
Electrochemical and Solid-State Letters
Volume
14
Title
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
Publication type
Journal article
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