Publication:
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
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1956 since deposited on 2021-10-19
1last month
Acq. date: 2025-12-10
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Views
1956 since deposited on 2021-10-19
1last month
Acq. date: 2025-12-10
Citations