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Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorNguyen, Duy
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-19T22:05:50Z
dc.date.available2021-10-19T22:05:50Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20181
dc.sourceIIOimport
dc.titleArsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
dc.typeOral presentation
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference7th International Conference on Si Epitaxy and Heterostructures - ICSI-7
dc.source.conferencedate28/08/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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