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Excess carrier lifetime and surface recombination velocity in dielectrically isolated Si-tubs

dc.contributor.authorMeynants, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.contributor.authorPolce, N.
dc.contributor.authorJones, S.
dc.contributor.authorBlackstone, S.
dc.date.accessioned2021-09-30T09:18:14Z
dc.date.available2021-09-30T09:18:14Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2022
dc.sourceIIOimport
dc.titleExcess carrier lifetime and surface recombination velocity in dielectrically isolated Si-tubs
dc.typeOral presentation
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conference1997 Joint International Meeting ECS (Electrochemical Society) and ISE (International Society of Electrochemistry) : 4th Interna
dc.source.conferencelocation
imec.availabilityPublished - imec


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