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Atomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics

dc.contributor.authorAdelmann, Christoph
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMoussa, Alain
dc.contributor.authorWoicik, Joseph
dc.contributor.authorMueller, Stefan
dc.contributor.authorSchoeder, Uwe
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorVan Elshocht, Sven
dc.date.accessioned2021-10-20T10:00:53Z
dc.date.available2021-10-20T10:00:53Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20256
dc.sourceIIOimport
dc.titleAtomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics
dc.typeMeeting abstract
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage411
dc.source.endpage412
dc.source.conferenceFrontiers in Electronic Materials: Correlation Effects and Memristive Phenomena
dc.source.conferencedate17/06/2012
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - imec


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