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Characterizing oxide traps in the InGaAs/Al2O3 system with sulfur passivation

dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-20T10:01:22Z
dc.date.available2021-10-20T10:01:22Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20277
dc.sourceIIOimport
dc.titleCharacterizing oxide traps in the InGaAs/Al2O3 system with sulfur passivation
dc.typeMeeting abstract
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.conferenceIEEE Semiconductor Interface Specialists Conferennce - SISC
dc.source.conferencedate5/12/2012
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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