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Dry etching challenges for patterning smooth lines : LWR reduction of extreme ultra violet photo resist

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorVaglio Pret, Alessandro
dc.contributor.authorGronheid, Roel
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-20T10:01:33Z
dc.date.available2021-10-20T10:01:33Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20283
dc.sourceIIOimport
dc.titleDry etching challenges for patterning smooth lines : LWR reduction of extreme ultra violet photo resist
dc.typeProceedings paper
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorVaglio Pret, Alessandro
dc.contributor.imecauthorGronheid, Roel
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage83280L
dc.source.conferenceAdvanced Etch Technology for Nanopatterning
dc.source.conferencedate12/02/2012
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 8328


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