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Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs

dc.contributor.authorBühler, R.T.
dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-20T10:10:09Z
dc.date.available2021-10-20T10:10:09Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20404
dc.sourceIIOimport
dc.titleBiaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage145
dc.source.endpage152
dc.source.conferenceProceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2012
dc.source.conferencelocationBrasilia Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 49, Issue 1


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