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Epitaxial growth of group IV and III-V alloy channel stacks on 300 mm Si substrates for sub-14 nm CMOS generations

dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T10:12:33Z
dc.date.available2021-10-20T10:12:33Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20424
dc.sourceIIOimport
dc.titleEpitaxial growth of group IV and III-V alloy channel stacks on 300 mm Si substrates for sub-14 nm CMOS generations
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.conferenceLawrence Symposium on Epitaxy
dc.source.conferencedate20/02/2012
dc.source.conferencelocationScottsdale, AZ USA
imec.availabilityPublished - imec


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