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Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS

dc.contributor.authorCaymax, Matty
dc.contributor.authorMerckling, Clement
dc.contributor.authorWang, Gang
dc.contributor.authorOrzali, Tommaso
dc.contributor.authorGuo, Weiming
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDekoster, Johan
dc.contributor.authorWaldron, Niamh
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T10:12:47Z
dc.date.available2021-10-20T10:12:47Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20426
dc.sourceIIOimport
dc.titleEpitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.conference24th Conference on Indium Phosphide and Related Materials - IPRM
dc.source.conferencedate27/08/2012
dc.source.conferencelocationSanta Barbara, CA USA
dc.identifier.urlIEEE Xplore
imec.availabilityPublished - imec


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