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De-process and physical characterization of HfO2 based resistive memory as studied by C-AFM

dc.contributor.authorCelano, Umberto
dc.contributor.authorChen, Yangyin
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T10:12:54Z
dc.date.available2021-10-20T10:12:54Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20427
dc.sourceIIOimport
dc.titleDe-process and physical characterization of HfO2 based resistive memory as studied by C-AFM
dc.typeMeeting abstract
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2847
dc.source.conferenceECS Fall Meeting Symposium E11: Nonvolatile Memories
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. 2012-02


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