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Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation

dc.contributor.authorChen, Yangyin
dc.contributor.authorDegraeve, Robin
dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-20T10:14:59Z
dc.date.available2021-10-20T10:14:59Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20443
dc.sourceIIOimport
dc.titleUnderstanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
dc.typeProceedings paper
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage20.3
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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