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dc.contributor.authorChen, Yangyin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-20T10:15:39Z
dc.date.available2021-10-20T10:15:39Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20447
dc.sourceIIOimport
dc.titleHf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM device
dc.typeMeeting abstract
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2806
dc.source.conference222nd ECS Fall Meeting
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. MA2012-02


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