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dc.contributor.authorChou, H.-Y.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorThoan, N.H.
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLin, Dennis
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-20T10:17:41Z
dc.date.available2021-10-20T10:17:41Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20461
dc.sourceIIOimport
dc.titleInternal photoemission at interfaces of ALD TaiOx insulating layers deposited on Si, InP and In0.53Ga0.47As
dc.typeProceedings paper
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage12019
dc.source.conferenceE-MRS Spring Meeting Symposium M: More than Moore: Novel Materials Approaches for Functionalized Silicon Based Microelectronics
dc.source.conferencedate14/05/2012
dc.source.conferencelocationStrasbourg France
dc.identifier.urlhttp://iopscience.iop.org/1757-899X/41/1/012019
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 41, Conference 1


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