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Highly-conformal plasma-enhanced atomic-layer deposition silicon dioxide liner for high aspect-ratio through-silicon via 3D interconnections

dc.contributor.authorCivale, Yann
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorHeylen, Nancy
dc.contributor.authorBeynet, Julien
dc.contributor.authorJung, Insoo
dc.contributor.authorWoo, Jeong-Jun
dc.contributor.authorSwinnen, Bart
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-20T10:18:59Z
dc.date.available2021-10-20T10:18:59Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20469
dc.sourceIIOimport
dc.titleHighly-conformal plasma-enhanced atomic-layer deposition silicon dioxide liner for high aspect-ratio through-silicon via 3D interconnections
dc.typeProceedings paper
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorSwinnen, Bart
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference4th Electronics System Integration Technologies Conference - ESTC
dc.source.conferencedate17/10/2012
dc.source.conferencelocationAmsterdam The Netherlands
imec.availabilityPublished - open access


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