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Radiation hardness aspects of advanced FinFET and UTBOX devices

dc.contributor.authorClaeys, Cor
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorKobayashi, D.
dc.contributor.authorMahatme, N.N.
dc.contributor.authorReed, R.A.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-20T10:19:59Z
dc.date.available2021-10-20T10:19:59Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20476
dc.sourceIIOimport
dc.titleRadiation hardness aspects of advanced FinFET and UTBOX devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3.7
dc.source.conferenceIEEE International SOI Conference
dc.source.conferencedate1/10/2012
dc.source.conferencelocationNapa, CA USA
imec.availabilityPublished - open access


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