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On the diffusion process of electronically active defects in amorphous HfOx

dc.contributor.authorClima, Sergiu
dc.contributor.authorChen, Yangyin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-20T10:20:59Z
dc.date.available2021-10-20T10:20:59Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20482
dc.sourceIIOimport
dc.titleOn the diffusion process of electronically active defects in amorphous HfOx
dc.typeProceedings paper
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.conference3rd International Workshop on Simulation and Modeling of Memory Devices - IWSMM
dc.source.conferencedate4/10/2012
dc.source.conferencelocationAgrate Italy
imec.availabilityPublished - imec


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